Display device

ABSTRACT

A display device includes a base substrate that comprises a display area and a peripheral area; a first circuit part that is located in the peripheral area of the base substrate; a first pixel that is located in the display area of the base substrate; and a second pixel that is located in the display area of the base substrate, wherein the first pixel is located between the first circuit part and the second pixel along a direction and comprises a first organic pattern that comprises a first portion located on the base substrate and a second portion protruding upward from the first portion, and the second pixel comprises a second organic pattern that comprises a third portion located on the base substrate and a fourth portion protruding upward from the third portion, wherein the first portion, the second portion, the third portion and the fourth portion are made of the same material, and a width of the second portion measured along the direction is different from a width of the fourth portion measured along the direction.

This application claims the benefit of Korean Patent Application No.10-2018-0019716, filed on Feb. 20, 2018, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein byreference in its entirety.

BACKGROUND 1. Field

The present disclosure relates to a display device.

2. Description of the Related Art

Liquid crystal displays (LCDs) are one of the most widely used types offlat panel displays. An LCD includes a pair of substrates having fieldgenerating electrodes such as pixel electrodes and a common electrode,and a liquid crystal layer interposed between the two substrates. In theLCD, voltages are applied to the field generating electrodes to generatean electric field in the liquid crystal layer. Liquid crystal moleculesof the liquid crystal layer are aligned based on the voltages applied tothe field generating electrodes, and the polarization of incident lightis controlled. As a result, a desired image is displayed on the LCD.

With growing popularity of LCDs as flat panel displays, various researchand development efforts are being made to improve display quality andreliability of the LCDs.

SUMMARY

Embodiments of the present disclosure provide a display device withimproved display quality and reliability.

However, embodiments of the present disclosure are not restricted to theone set forth herein. The above and other aspects of the presentdisclosure will become more apparent to one of ordinary skill in the artto which the present disclosure pertains by referencing the detaileddescription of the present disclosure given below.

According to an embodiment, there is provided a display device. Thedisplay device includes a base substrate that includes a display areaand a peripheral area; a first circuit part that is located in theperipheral area of the base substrate; a first pixel that is located inthe display area of the base substrate; and a second pixel that islocated in the display area of the base substrate, wherein the firstpixel is located between the first circuit part and the second pixelalong a direction and includes a first organic pattern that includes afirst portion located on the base substrate and a second portionprotruding upward from the first portion, and the second pixel includesa second organic pattern that includes a third portion located on thebase substrate and a fourth portion protruding upward from the thirdportion, wherein the first portion, the second portion, the thirdportion and the fourth portion are made of the same material, and awidth of the second portion measured along the direction is differentfrom a width of the fourth portion measured along the direction.

According to another embodiment, there is provided a display device. Thedisplay device includes a base substrate that includes a display areaand a peripheral area; a circuit part that is located in the peripheralarea of the base substrate; a first pixel that is located in the displayarea of the base substrate; and a second pixel that is located in thedisplay area of the base substrate, wherein the first pixel is locatedbetween the circuit part and the second pixel along a direction andincludes a first organic pattern that includes a first portion locatedon the base substrate and having a first hardness and a second portionhaving a second hardness relatively greater than the first hardness, andthe second pixel includes a second organic pattern that includes a thirdportion located on the base substrate and having a third hardness and afourth portion having a fourth hardness relatively greater than thethird hardness, wherein a width of the first organic pattern measuredalong the direction is different from a width of the second organicpattern measured along the direction.

The present disclosure is not limited to the aforementioned embodiments,and other embodiments that are not mentioned above will be apparent to aperson having ordinary skill in the art from the following description.

Details of other exemplary embodiments will be included in the detaileddescription of the present disclosure and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the present disclosure willbecome more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings, in which:

FIG. 1 is a conceptual plan view of an array substrate of a displaydevice according to an embodiment;

FIG. 2 is a cross-sectional view of the display device including thearray substrate of FIG. 1, taken along the lines X1-X1′. X2-X2′ andX3-X3′;

FIG. 3 is an enlarged view of a portion ‘A’ and a portion ‘B’ of FIG. 2;

FIG. 4 is an enlarged view of a portion ‘C’ and a portion ‘D’ of FIG. 2;

FIG. 5 is a partial plan view of the array substrate in a case where acircuit part of FIG. 2 has an amorphous silicon gate (ASG) structure;

FIG. 6 is a cross-sectional view illustrating an exemplary structure ofthe display device, taken along the lines Z1-Z1′ and Z2-Z2′ of FIG. 5;

FIG. 7 is a view illustrating split exposure performed using a mask in adisplay device manufacturing process according to an embodiment;

FIG. 8 is a plan view illustrating an exemplary structure of a firstmask pattern portion of the mask of FIG. 7, more specifically, a planview of the first mask pattern portion for forming organic patterns ofthird pixels illustrated in FIG. 1;

FIG. 9 is an enlarged plan view of a portion ‘P’ of FIG. 8;

FIG. 10 is an enlarged plan view of a portion ‘Q’ of FIG. 8;

FIG. 11 is an enlarged plan view of a portion ‘R’ of FIG. 8;

FIGS. 12 through 19 are views illustrating a process of manufacturing adisplay device using a mask having the first mask pattern portion ofFIG. 8;

FIG. 20 is a plan view of a first mask pattern portion of a mask forforming organic patterns of first pixels illustrated in FIG. 1;

FIGS. 21 through 23 are views illustrating a process of manufacturing adisplay device using a mask having the first mask pattern portion ofFIG. 20;

FIG. 24 is a plan view of a first mask pattern portion of a mask forforming organic patterns of second pixels illustrated in FIG. 1; and

FIGS. 25 through 27 are views illustrating a process of manufacturing adisplay device using a mask having the first mask pattern portion ofFIG. 24.

DETAILED DESCRIPTION

Features of the inventive concept and methods of accomplishing the samemay be understood more readily by reference to the following detaileddescription of embodiments and the accompanying drawings. The inventiveconcept may, however, be embodied in many different forms and should notbe construed as being limited to the embodiments set forth herein.Rather, these embodiments are provided so that this disclosure will bethorough and complete and will fully convey the concept of the inventiveconcept to those skilled in the art. Like reference numerals refer tolike elements throughout the specification.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the inventiveconcept. As used herein, singular forms “a”, “an,” and “the” areintended to include plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify a presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude a presence or additionof one or more other features, integers, steps, operations, elements,components, and/or groups thereof.

It will be understood that when an element or layer is referred to asbeing “on”, “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element or layeror one or more intervening elements or layers may be present. Incontrast, when an element is referred to as being “directly on”.“directly connected to” or “directly coupled to” another element orlayer, there may be no intervening elements or layers present. As usedherein, the term “and/or” includes any and all combinations of one ormore of the associated listed items.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, components, regions,layers, and/or sections, these elements, components, regions, layers,and/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer, orsection from another region, layer, or section. Thus, a first element,component, region, layer, or section discussed below could be termed asecond element, component, region, layer, or section without departingfrom the teachings of the inventive concept.

Throughout the specification, the same reference numerals are used forthe same or similar elements.

Hereinafter, embodiments of the present disclosure will be describedwith reference to the drawings.

FIG. 1 is a conceptual plan view of an array substrate 100 of a displaydevice 1 according to an embodiment. FIG. 2 is a cross-sectional view ofthe display device 1 including the array substrate 100 of FIG. 1, takenalong the lines X1-X1′, X2-X2′ and X3-X3′. FIG. 3 is an enlarged view ofa portion ‘A’ and a portion ‘B’ of FIG. 2. FIG. 4 is an enlarged view ofa portion ‘C’ and a portion ‘D’ of FIG. 2.

Referring to FIGS. 1 through 4, the display device 1 according to theembodiment may include the array substrate 100, a counter substrate 800facing the array substrate 100, and a liquid crystal layer LC interposedbetween the array substrate 100 and the counter substrate 800.

The planar structure of the array substrate 100 will now be describedwith reference to FIG. 1.

Referring to FIG. 1, the array substrate 100 may include a first basesubstrate 110, a plurality of first pixels Pxa, a plurality of secondpixels Pxb, a plurality of third pixels Pxc, a plurality of firstcircuit parts 510 and a plurality of second circuit parts 510′, Thearray substrate 100 may further include a plurality of first peripheralpatterns Pt1 and a plurality of second peripheral patterns Pt2.

The first base substrate 110 may be a transparent insulating substrate.For example, the first base substrate 110 may be a glass substrate, aquartz substrate, or a transparent resin substrate. In addition, thefirst base substrate 110 may include polymer or plastic having highthermal resistance. In some embodiments, the first base substrate 110may have flexibility. That is, the first base substrate 110 may be adeformable substrate that can be rolled, folded, or bent.

The first base substrate 110 may include a display area DA and aperipheral area PA around the display area DA.

The display area DA may be an area that displays an image, and theperipheral area PA may be an area that does not display an image. Insome embodiments, circuitry, such as wires, elements, etc., required todisplay an image may be located in the peripheral area PA.

In FIGS. 1 through 4, the peripheral area PA is illustrated as beinglocated outside the display area DA. However, the peripheral area PA isnot necessarily located outside the display area DA. In addition,although the peripheral area PA is illustrated as surrounding thedisplay area DA in a plan view, it does not necessarily surround thedisplay area DA. In some embodiments, the peripheral area PA maysurround only a portion of the display area DA.

From a perspective of a mask exposure in a manufacturing process, thefirst base substrate 110 may include a first exposure area EA1, a secondexposure area EA2, and an area in which the first exposure area EA1 andthe second exposure area EA2 overlap, for example, a double exposurearea DEA in which exposure is performed twice. A portion of the doubleexposure area DEA may be included in the display area DA, and a portionof the display area DA excluding the double exposure area DEA may be asingle exposure area.

The first pixels Pxa, the second pixels Pxb, and the third pixels Pxcare located in the display area DA of the first base substrate 110. Thefirst pixels Pxa, the second pixels Pxb, and the third pixels Pxc may bepixels displaying different colors. In an embodiment, the first pixelsPxa may display a first color, the second pixels Pxb may display asecond color that is different from the first color, and the thirdpixels Pxc may display a third color that is different from the firstcolor and the second color.

The first pixels Pxa, the second pixels Pxb, and the third pixels Pxcmay be arranged in various forms. In FIG. 1, the first through thirdpixels Pxa through Pxc are sequentially arranged along a first directionD1, for example, along a horizontal direction based on the orientationof the drawing, and the same pixels are arranged along a seconddirection D2 that intersects the first direction D1, for example, alonga vertical direction based on the orientation of the drawing. Thisstructure will hereinafter be described for ease of description, butsome embodiments of the present inventive concept are not limited tothis structure. In an embodiment, not all pixels arranged along thevertical direction based on FIG. 1 may be the same. That is, not allpixels included in one pixel column may be the same. For example, afirst pixel column may include the second pixels Pxb and/or the thirdpixels Pxc, as well as the first pixels Pxa.

Each of the first pixels Pxa may include a first thin film transistor Talocated on the first base substrate 110, a protective layer 180 locatedon the first thin film transistor Ta, a first insulating pattern Pta1and a second insulating pattern Pta2 that are located on the protectivelayer 180, and a first pixel electrode (not illustrated) that is locatedon the first insulating pattern Pta1 and electrically connected to thefirst thin film transistor Ta. In some embodiments, the first insulatingpattern Pta1 and the second insulating pattern Pta2 may be spaced fromeach other. In an embodiment, the first insulating pattern Pta1 and thesecond insulating pattern Pta2 may be connected to each other.

The second insulating pattern Pta2 of each of the first pixels Pxa mayinclude a first organic pattern 250, and the first organic pattern 250may overlap the first thin film transistor Ta. In some embodiments, thefirst insulating pattern Pta1 may be made of the same material as thefirst organic pattern 250.

Like the first pixels Pxa, each of the second pixels Pxb may include asecond thin film transistor Tb located on the first base substrate 110,the protective layer 180 located on the second thin film transistor Tb,a first insulating pattern Ptb1 and a second insulating pattern Ptb2that are located on the protective layer 180, and a second pixelelectrode (not illustrated) that is located on the first insulatingpattern Ptb1 and electrically connected to the second thin filmtransistor Tb.

The second insulating pattern Ptb2 of each of the second pixels Pxb mayinclude a second organic pattern 270, and the second organic pattern 270may overlap the second thin film transistor Tb. In some embodiments, thesecond insulating pattern Ptb2 of each of the second pixels Pxb may bemade of the same material as the second organic pattern 270.

In some embodiments, at least one of the second insulating pattern Pta2of each of the first pixels Pxa and the second insulating pattern Ptb2of each of the second pixels Pxb may be omitted.

Like the first pixels Pxa and the second pixels Pxb, each of the thirdpixels Pxc may include a third thin film transistor Tc located on thefirst base substrate 110, the protective layer 180 located on the thirdthin film transistor Tc, a first insulating pattern Ptc1 and a secondinsulating pattern Ptc2 that are located on the protective layer 180,and a third pixel electrode (not illustrated) that is located on thefirst insulating pattern Ptc1 and electrically connected to the thirdthin film transistor Tc.

Some of the third pixels Pxc may be located in the double exposure areaDEA of the display area DA of the first base substrate 110. Of the thirdpixels Pxc, a pixel that is located in the double exposure area DEA andrelatively located on a left side of the drawing will be referred to asa first specific pixel Pxc1, and a second insulating pattern included inthe first specific pixel Pxc1 will be referred to as a first specificinsulating pattern Ptc21. In addition, among the third pixels Pxc, apixel that located in the same pixel row as the first specific pixelPxc1, located in the double exposure area DEA, and relatively located ona right side of the drawing will be referred to as a second specificpixel Pxc2, and a second insulating pattern included in the secondspecific pixel Pxc2 will be referred to as a second specific insulatingpattern Ptc22.

The first specific insulating pattern Ptc21 may include a first specificorganic pattern 230 a located on the protective layer 180 and a thirdspecific organic pattern 311 located on the first specific organicpattern 230 a. In some embodiments, the first specific organic pattern230 a may overlap the third thin film transistor Tc of the firstspecific pixel Pxc1. In some embodiments, the first specific organicpattern 230 a may be made of the same material as the first insulatingpattern Ptc1 of the first specific pixel Pxc1.

The second specific insulating pattern Ptc22 may include a secondspecific organic pattern 230 b located on the protective layer 180 and afourth specific organic pattern 313 located on the second specificorganic pattern 230 b. In some embodiments, the second specific organicpattern 230 b may overlap the third thin film transistor Tc of thesecond specific pixel Pxc2. The second specific organic pattern 230 bmay be made of the same material as the first insulating pattern Ptc1 ofthe second specific pixel Pxc2.

In some embodiments, the second specific organic pattern 230 b may bemade of the same material as the first specific organic pattern 230 a.In addition, the third specific organic pattern 311 may be made of thesame material as the fourth specific organic pattern 313. In addition,the third specific organic pattern 311 and the fourth specific organicpattern 313 may be made of the same material as the first organicpattern 250 or the second organic pattern 270. For ease of description,a case where the third specific organic pattern 311 and the fourthspecific organic pattern 313 are made of the same material as the firstorganic pattern 250 will be described below as an example.

The first organic pattern 250, the second organic pattern 270, the firstspecific organic pattern 230 a, the second specific organic pattern 230b, the third specific organic pattern 311, and the fourth specificorganic pattern 313 may include a photosensitive material. Thephotosensitive material may be a photosensitive organic material. Insome embodiments, the photosensitive organic material may include anegative photosensitive material whose portion exposed to light is curedor a positive photosensitive material whose portion unexposed to lightis cured. For ease of description, a case where the photosensitiveorganic material is a negative photosensitive material will be describedbelow as an example.

In some embodiments, the third specific organic pattern 311, the fourthspecific organic pattern 313, and the first organic pattern 250 mayinclude a colorant of the first color that transmits light of a firstcolor wavelength, the second organic pattern 270 may include a colorantof the second color that transmits light of a second color wavelengththat is different from the first color wavelength, and the firstspecific organic pattern 230 a and the second specific organic pattern230 b may include a colorant of the third color that transmits light ofa third color wavelength that is different from the first colorwavelength and the second color wavelength. In an embodiment, the firstcolor may be any one of red, green and blue, the second color may beanother one of red, green and blue, and the third color may be theremaining one of red, green and blue.

The first specific organic pattern 230 a may include a first portion 231a and a second portion 233 a. The first portion 231 a may be located onthe protective layer 180 and may overlap the third thin film transistorTc of the first specific pixel Pxc1. The second portion 233 a may belocated on the first portion 231 a and may protrude toward the countersubstrate 800.

The second specific organic pattern 230 b may include a third portion231 b and a fourth portion 233 b. The third portion 231 b may be locatedon the protective layer 180 and may overlap the third thin filmtransistor Tc of the second specific pixel Pxc2. The fourth portion 233b may be located on the third portion 231 b and may protrude toward thecounter substrate 800.

In some embodiments, each of the second portion 233 a and the fourthportion 233 b may be an island shape in a plan view. That is, the secondportion 233 a may be an island-shaped pattern formed on the firstportion 231 a, and the fourth portion 233 b may be an island-shapedpattern formed on the third portion 231 b.

The first portion 231 a of the first specific organic pattern 230 a maybe divided into a first non-overlap portion 2311 a not overlapping thesecond portion 233 a and a first overlap portion 2313 a overlapping thesecond portion 233 a. The hardness of the first non-overlap portion 2311a may be relatively lower than the hardness of the first overlap portion2313 a. The first overlap portion 2313 a may be a portion exposed tolight twice, i.e., a double exposed portion, and the first non-overlapportion 2311 a may be a portion exposed to light once, i.e., a singleexposed portion. Since the first overlap portion 2313 a has been exposedto light more than the first non-overlap portion 2311 a, it may have agreater hardness than the first non-overlap portion 2311 a. That is, thefirst overlap portion 2313 a may be relatively harder than the firstnon-overlap portion 2311 a.

In some embodiments, the second portion 233 a may have a relativelygreater hardness than the first non-overlap portion 2311 a of the firstportion 231 a. Like the first overlap portion 2313 a, the second portion233 a may have been exposed to light more than the first non-overlapportion 2311 a. Accordingly, the second portion 233 a may be relativelyharder than the first non-overlap portion 2311 a.

Similarly, the third portion 231 b of the second specific organicpattern 230 b may be divided into a second non-overlap portion 2311 bnot overlapping the fourth portion 233 b and a second overlap portion2313 b overlapping the fourth portion 233 b. The hardness of the secondnon-overlap portion 2311 b may be relatively lower than the hardness ofthe second overlap portion 2313 b. The second overlap portion 2313 b maybe a double exposed portion, and the second non-overlap portion 2311 bmay be a single exposed portion. Therefore, the second overlap portion2313 b may have a greater hardness than the second non-overlap portion2311 b.

In some embodiments, the fourth portion 233 b may have a relativelygreater hardness than the second non-overlap portion 23111 b of thethird portion 231 b.

The first portion 231 a and the second portion 233 a of the firstspecific organic pattern 230 a may be made of the same material as thethird portion 231 b and the fourth portion 233 b of the second specificorganic pattern 230 b. In addition, the first overlap portion 2313 a ofthe first portion 231 a, the second portion 233 a, the second overlapportion 2313 b of the third portion 231 b, and the fourth portion 233 bmay be double exposed portions. In some embodiments, the first overlapportion 2313 a of the first portion 231 a, the second portion 233 a, thesecond overlap portion 2313 b of the third portion 231 b, and the fourthportion 233 b may have substantially the same hardness. In addition,single exposed portions including the first non-overlap portion 2311 aof the first portion 231 a and the second non-overlap portion 2311 b ofthe third portion 231 b may have substantially the same hardness.

In some embodiments, a width W11 of the first portion 231 a of the firstspecific organic pattern 230 a measured along the first direction D1 maybe smaller than a width W21 of the third portion 231 b of the secondspecific organic pattern 230 b measured along the first direction D1.This difference in width between the first portion 231 a and the thirdportion 231 b may be caused by sagging of a mask during an exposureprocess. For example, a portion of the mask corresponding to the firstportion 231 a may be sagging at the time of forming the first portion231 a, and a portion of the mask corresponding to the third portion 231b may be normal (e.g., not sagging) at the time of forming the thirdportion 231 b.

In some embodiments, a width W12 of the second portion 233 a of thefirst specific organic pattern 230 a measured along the first directionD1 may be greater than a width W22 of the fourth portion 233 b of thesecond specific organic pattern 230 b measured along the first directionD1. This difference in width between the second portion 233 a and thefourth portion 233 b may be caused by sagging of the mask during theexposure process.

The width W12 of the second portion 233 a may be greater than the widthW22 of the fourth portion 233 b. Therefore, a width of the first overlapportion 2313 a overlapping the second portion 233 a may be greater thana width of the second overlap portion 2313 b overlapping the fourthportion 233 b.

During a mask split exposure process, steps may be formed in patternswithin pixels due to, for example, mask sagging at a boundary of anexposure area. Accordingly, a cell gap between the array substrate 100and the counter substrate 800 may change at the boundary of the exposurearea. Since the thickness of the liquid crystal layer LC can determinetransmittance of light passing through the liquid crystal layer LC, achange in the cell gap at the boundary of the exposure area can causedeterioration of display quality.

In the current embodiment, however, the first specific organic pattern230 a and the second specific organic pattern 230 b are formed throughdouble exposure. Therefore, it is possible to prevent or minimize stepsof organic patterns at the boundary of the exposure area, prevent achange in the cell gap, prevent deterioration of display quality, andprovide a display device with improved reliability.

The first circuit parts 510 may be located in the peripheral area PA ofthe first base substrate 110. The protective layer 180 may be located onthe first circuit parts 510, and the first peripheral patterns Pt1 maybe located on the protective layer 180.

The first circuit parts 510 may be driver circuits, for example, gatedriver circuits and may be located in the peripheral area PA on one sideof the display area DA. In some embodiments, the first circuit parts 510may have an amorphous silicon gate (ASG) structure. An exemplarystructure of the first circuit parts 510 will be described later withreference to FIGS. 5 and 6.

The first peripheral patterns Pt1 may overlap the first circuit parts510, respectively. When a first peripheral pattern Pt1 overlaps a firstcircuit part 510, it may denote that the first peripheral pattern Pt1 islocated on at least a portion of a material layer or a pattern thatforms the first circuit part 510.

Each of the first peripheral patterns Pt1 may be an island shape in aplan view. That is, the first peripheral patterns Pt1 may beisland-shaped patterns located in the peripheral area PA of the firstbase substrate 110. When the first peripheral patterns Pt1 areisland-shaped, liquid crystals injected between the array substrate 100and the counter substrate 800 can spread more quickly and uniformly.That is, the liquid crystal spreadability of the liquid crystal layer LCcan be enhanced.

Each of the first peripheral patterns Pt1 may include a first peripheralorganic pattern 271 that is located on the protective layer 180 andoverlaps the first circuit part 510 and a third peripheral organicpattern 315 that is located on the first peripheral organic pattern 271.In some embodiments, the first peripheral organic pattern 271 may bemade of the same material as the first specific organic pattern 230 aand the second specific organic pattern 230 b, and the third peripheralorganic pattern 315 may be made of the same material as the thirdspecific organic pattern 311.

In some embodiments, the second circuit parts 510′ may be located in theperipheral area PA on the other side of the display area DA of the firstbase substrate 110. The protective layer 180 may be located on thesecond circuit parts 510′, and the second peripheral patterns Pt2 may belocated on the protective layer 180. The second peripheral patterns Pt2may overlap the second circuit parts 510′, respectively.

The second circuit parts 510′, like the first circuit parts 510, may begate driver circuits and may be located on the opposite side of thedisplay area DA from the first circuit parts 510.

Like the first peripheral patterns Pt1, each of the second peripheralpatterns Pt2 may be an island shape in a plan view.

Each of the second peripheral patterns Pt2 may include a secondperipheral organic pattern 273 that is located on the protective layer180 and overlaps the second circuit part 510′ and a fourth peripheralorganic pattern 317 that is located on the second peripheral organicpattern 273. In some embodiments, the second peripheral organic pattern273 may be made of the same material as the first peripheral organicpattern 271, the first specific organic pattern 230 a and the secondspecific organic pattern 230 b, and the fourth peripheral organicpattern 317 may be made of the same material as the third peripheralorganic pattern 315 and the third specific organic pattern 311.

In some embodiments, a width W31 of the first peripheral organic pattern271 measured along the first direction D1 may be greater than a widthW41 of the second peripheral organic pattern 273 measured along thefirst direction D1. This difference in width between the firstperipheral organic pattern 271 and the second peripheral organic pattern273 may be caused by sagging of the mask during the exposure process.

In some embodiments, the first peripheral organic pattern 271 and thesecond peripheral organic pattern 273 may have substantially the samehardness.

While the first peripheral organic pattern 271 and the second peripheralorganic pattern 273 are formed through single exposure, the firstoverlap portion 2313 a and the second overlap portion 2313 b may beformed through double exposure. Therefore, in some embodiments, thehardness of the first peripheral organic pattern 271 and the secondperipheral organic pattern 273 may be lower than the hardness of thefirst overlap portion 2313 a or the hardness of the second overlapportion 2313 b. Similarly, since the second portion 233 a and the fourthportion 233 b are formed through double exposure, the hardness of thefirst peripheral organic pattern 271 and the second peripheral organicpattern 273 may be lower than the hardness of the second portion 233 aor the hardness of the fourth portion 233 b.

A light shielding layer 220 may be located on the first base substrate110. The light shielding layer 220 may cover the first specificinsulating pattern Ptc21, the second specific insulating pattern Ptc22,the first organic pattern 250, and the second organic pattern 270. Insome embodiments, the light shielding layer 220 may further cover thefirst peripheral patterns Pt1 and the second peripheral patterns Pt2. Insome embodiments, the light shielding layer 220 may include a lightshielding pigment such as black carbon and may include a photosensitiveorganic material.

In some embodiments, a portion of the light shielding layer 220 thatoverlaps the first specific insulating pattern Ptc21 may contact thecounter substrate 800. In addition, a portion of the light shieldinglayer 220 that overlaps the second specific insulating pattern Ptc22 maycontact the counter substrate 800. That is, a portion of the lightshielding layer 220 and the first specific insulating pattern Ptc21 mayfunction as a spacer for maintaining the cell gap. Similarly, the lightshielding layer 220 and the second specific insulating pattern Ptc22 mayalso function as a spacer for maintaining the cell gap.

The first peripheral patterns Pt1 and the light shielding layer 220 mayalso function as a spacer, and the second peripheral patterns Pt2 andthe light shielding layer 220 may also function as a spacer.Accordingly, the cell gap can also be uniformly maintained in theperipheral area PA, and a common electrode 870 of the counter substrate800 and the first circuit parts 510 can be prevented from contactingeach other.

The counter substrate 800 will now be described.

The counter substrate 800 may include a second base substrate 810 andthe common electrode 870.

Like the first base substrate 110, the second base substrate 810 may bea transparent insulating substrate. In addition, the second basesubstrate 810 may include polymer or plastic having high thermalresistance. In some embodiments, the second base substrate 810 may haveflexibility.

The common electrode 870 may be located on a surface of the second basesubstrate 810 that faces the first base substrate 110. The commonelectrode 870 may be made of a transparent conductive material such asITO or IZO and may be formed on the entire surface of the second basesubstrate 810 without distinction between pixels. A common voltage maybe applied to the common electrode 870 to form an electric fieldtogether with a pixel electrode of each pixel.

FIG. 5 is a partial plan view of the array substrate 100 in a case wherethe first circuit part 510 of FIG. 2 has an ASG structure. FIG. 6 is across-sectional view illustrating an exemplary structure of the displaydevice 1, taken along the lines Z1-Z1′ and Z2-Z2′ of FIG. 5.

Referring to FIGS. 5 and 6, the gate driver circuit of the first circuitpart 510 may include a source electrode contact portion 60 a, a gateline contact portion 22, a first source or drain line 60 b, a first pad62, a second pad 26, a gate line 24, a first bridge line 81, and asecond bridge line 82.

In addition, a thin film transistor of each pixel, for example, thethird thin film transistor Tc of the first specific pixel Pxc1 mayinclude a gate electrode 29, a semiconductor layer 41, a sourceelectrode 59 and a drain electrode 69.

The third thin film transistor Tc will first be described below.

The gate electrode 29 may be located on the first base substrate 110,may be connected to the gate line 24 located on the first base substrate110, and may extend from the gate line 24.

A gate insulating layer 30 may be located on the gate line 24 and thegate electrode 29. The gate insulating layer 30 may be made of aninsulating material such as silicon nitride or silicon oxide.

The semiconductor layer 41 may be located on the gate insulating layer30, and at least a portion of the semiconductor layer 41 may overlap thegate electrode 29. The semiconductor layer 41 may include amorphoussilicon, polycrystalline silicon, or an oxide semiconductor.

A data line 54 that intersects the gate line 24 may be located on thegate insulating layer 30. The data line 54 may deliver a data signal.

The source electrode 59 may branch from the data line 54, and at least aportion of the source electrode 59 may overlap the gate electrode 29.

The drain electrode 69 may be spaced apart from the source electrode 59with the semiconductor layer 41 interposed between the drain electrode69 and the source electrode 59, and at least a portion of the drainelectrode 69 may overlap the gate electrode 29.

The gate electrode 29, the source electrode 59 and the drain electrode69 may constitute one thin film transistor, for example, the third thinfilm transistor Tc together with the semiconductor layer 41, and achannel of the third thin film transistor Tc is formed in thesemiconductor layer 41 between the source electrode 59 and the drainelectrode 69.

The protective layer 180 may be located on the third thin filmtransistor Tc. and a contact hole CT may be formed through theprotective layer 180 to expose a portion of the drain electrode 69.

The first specific organic pattern 230 a and the third specific organicpattern 311 that overlaps the third thin film transistor Tc may belocated on the protective layer 180. In addition, the first insulatingpattern Ptc1 that does not overlap the third thin film transistor Tc maybe located on the protective layer 180.

A pixel electrode 150 may be located on the protective layer 180 and thefirst insulating pattern Ptc1. The pixel electrode 150 may be connectedto the drain electrode 69 exposed through the contact hole CT.

The first circuit part 510 will now be described.

The source electrode contact portion 60 a may be connected to a secondsource or drain line 60 c of a gate signal transmission transistor ofthe gate driver circuit. Here, the second source or drain line 60 c mayextend toward the display area DA and integrated with the sourceelectrode contact portion 60 a. A first source or drain line 60 b may beconnected to the source electrode contact portion 60 a. Therefore, agate output signal provided by a first source electrode 61 of the gatesignal transmission transistor can be transmitted to a preceding stage.

The source electrode contact portion 60 a and the gate line contactportion 22 may be connected to each other. Therefore, the gate outputsignal provided by the first source electrode 61 can be transmitted to athin film transistor formed in each pixel of the display area DA, forexample, to the gate electrode 29 of the third thin film transistor Tcof the first specific pixel Pxc1. The source electrode contact portion60 a may be formed on the gate insulating layer 30, and the gate linecontact portion 22 may be formed under the gate insulating layer 30.However, the source electrode contact portion 60 a and the gate linecontact portion 22 can be electrically connected to each other by thefirst bridge line 81.

The protective layer 180 may be formed on the source electrode contactportion 60 a and the gate insulating layer 30. The protective layer 180may be formed by depositing silicon oxide or silicon nitride, but may beomitted in some embodiments.

First holes 71 may be formed through the protective layer 180 to exposea portion of the source electrode contact portion 60 a, and second holes72 may be formed through the protective layer 180 and the gateinsulating layer 30 to expose a portion of the gate line contact portion22, so that the source electrode contact portion 60 a and the gate linecontact portion 22 can be connected to each other by the first bridgeline 81. Here, the first bridge line 81 may be formed on the protectivelayer 180.

The gate line 24 may be connected to the gate line contact portion 22.Therefore, the gate output signal transmitted from the source electrodecontact portion 60 a through the first bridge line 81 may be deliveredto the gate electrode 29 through the gate line 24.

As illustrated in FIGS. 5 and 6, the first pad 62 may be connected tothe first source or drain line 60 b of a following stage to receive agate output signal of the following stage. The first pad 62 may belocated on a side of the gate line 24, and the second pad 26 may belocated on the other side of the gate line 24 in the second directionD2. The second pad 26 may be connected to the first pad 62 to receivethe gate output signal of the following stage. Here, the first pad 62and the second pad 26 may be electrically connected by the second bridgeline 82. The first pad 62 may be formed on the gate insulating layer 30,and the second pad 26 may be formed under the gate insulating layer 30.

That is, the second pad 26 may be formed on the same layer as the gateelectrode 29. The protective layer 180 may be formed on the first pad62, and the gate insulating layer 30 and the protective layer 180 may beformed on the second pad 26. Therefore, to connect the first pad 62 andthe second pad 26 to the second bridge line 82, third holes 73 may beformed on the first pad 62, and fourth holes 74 may be formed on thesecond pad 26. The first and second pads 62 and 26 may be connected tothe second bridge line 82 by the third and fourth holes 73 and 74,respectively. Here, the second bridge line 82 may be formed on theprotective layer 180.

As illustrated in FIG. 5, the first circuit part 510 may include acontact region 510 b and a wiring region 510 a. The first peripheralorganic pattern 271 and the like may be formed in the wiring region 510a not to overlap the first through fourth holes 71 through 74 formed inthe contact region 510 b.

Here, the contact region 510 b may correspond to a region in which thefirst through fourth holes 71 through 74 for electrically connectingwirings formed in the gate driver circuit are densely formed. Contactportions for electrical connection between wiring layers may also beformed in the wiring region 510 a. However, those contact portions areformed relatively more densely in the contact region 510 b than in thewiring region 510 a.

Since the first peripheral organic pattern 271 is disposed not tooverlap the contact region 510 b or the first through fourth holes 71through 74, a process of forming holes in the first circuit part 510becomes easier.

The structure of the second circuit part 510′ may be substantially thesame as or similar to that of the first circuit part 510, and thus adetailed description of the structure of the second circuit part 510′will be omitted.

FIG. 7 is a view illustrating split exposure performed using a mask M1in a display device manufacturing process according to an embodiment.FIG. 8 is a plan view illustrating an exemplary structure of a firstmask pattern portion M11 of the mask M1 of FIG. 7, more specifically, aplan view of the first mask pattern portion M11 for forming organicpatterns of the third pixels Pxc illustrated in FIG. 1. FIG. 9 is anenlarged plan view of a portion ‘P’ of FIG. 8. FIG. 10 is an enlargedplan view of a portion ‘Q’ of FIG. 8. FIG. 11 is an enlarged plan viewof a portion ‘R’ of FIG. 8.

Referring to FIG. 7, the mask M1 used to manufacture the display device1 may include the first mask pattern portion M11 and a second maskpattern portion M12. In the process of manufacturing the display device1, only the first mask pattern portion M11 may be used. That is, thesecond mask pattern portion M12 may be covered by, for example, a lightshielding member BL.

First, an organic layer ORG is formed on the first base substrate 110,and the first mask pattern portion M11 is placed above the organic layerORG. Then, a first exposure process is performed on a portion of theorganic layer ORG. Next, the mask M1 is moved to the right, and a secondexposure process is performed on another portion of the organic layerORG using the first mask pattern portion M11. The first exposure areaEA1 where the first exposure process is performed and the secondexposure area EA2 where the second exposure process is performed maypartially overlap each other, and this overlap area may correspond tothe double exposure area DEA illustrated in FIGS. 1 and 2.

Both ends Ho of the mask M1 may be supported during the exposure, but acenter portion of the mask M1 may sag downwardly due to gravity.Therefore, while a portion of the first mask pattern portion M11 that isrelatively located on the left side of the drawing may not sag, aportion of the first mask pattern portion M11 that is relatively locatedon the right side may sag downwardly.

Referring to FIGS. 8 through 11, the first mask pattern portion M11 mayinclude first patterns M11 a corresponding to the first insulatingpatterns Ptc1 of the third pixels Pxc, second patterns M11 bcorresponding to the second insulating patterns Ptc2 of the third pixelsPxc, third patterns M11 c corresponding to the first peripheral patternsPt1, fourth patterns M11 d corresponding to the second peripheralpatterns Pt2, and a light shielding portion M11 c.

In some embodiments, a horizontal width Wb1 of each of the secondpatterns M11 b may be greater than a horizontal width Wc1 of each of thethird patterns M11 c and a horizontal width Wd1 of each of the fourthpatterns M11 d. In addition, a vertical width Wb2 of each of the secondpatterns M11 b may be greater than a vertical width Wc2 of each of thethird patterns M11 c and a vertical width Wd2 of each of the fourthpatterns M11 d. In some embodiments, the horizontal width Wc1 of each ofthe third patterns M11 c and the horizontal width Wd1 of each of thefourth patterns M11 d may be substantially equal, and the vertical widthWc2 of each of the third patterns M11 c and the vertical width Wd2 ofeach of the fourth patterns M11 d may be substantially equal.

FIGS. 12 through 19 are views illustrating a process of manufacturingthe display device 1 using a mask having the first mask pattern portionM11 of FIG. 8.

Referring to FIGS. 12 and 13, a first base substrate 110 including adisplay area DA and a peripheral area PA is prepared.

The display area DA may have a plurality of first pixel regions Ra, aplurality of second pixel regions Rb, and a plurality of third pixelregions Rc. Here, the first pixel regions Ra are regions where firstpixels Pxa are to be located, the second pixel regions Rb are regionswhere second pixels Pxb are to be located, and the third pixel regionsRc are regions where third pixels Pxc are to be located.

The third pixel regions Rc may include first specific pixel regions Rc1and second specific pixel regions Rc2. Each of the first specific pixelregions Rc1 is a region where a first specific pixel Pxc1 is to belocated, and each of the second specific pixel regions Rc2 is a regionwhere a second specific pixel Pxc2 is to be located.

First circuit parts 510 and second circuit parts 510′ may be located inthe peripheral area PA.

A first thin film transistor Ta may be located in each of the firstpixel regions Ra, a second thin film transistor Tb may be located ineach of the second pixel regions Rb, and a third thin film transistor Tcmay be located in each of the third pixel regions Rc.

Next, a first photosensitive material layer ORG1 is formed on the firstbase substrate 110. The first photosensitive material layer ORG1 may beformed not only in the display area DA of the first base substrate 110but also in the peripheral area PA of the first base substrate 110. Thatis, the first photosensitive material layer ORG1 may be formed on theentire surface of the first base substrate 110 and cover the first thinfilm transistors Ta, the second thin film transistors Tb, the third thinfilm transistors Tc, the first circuit parts 510 and the second circuitparts 510′. The first photosensitive material layer ORG1 may include aphotosensitive material and may include a colorant of a first color. Thephotosensitive material may be a negative photosensitive material.

Next, referring to FIGS. 14 and 15, the first mask pattern portion M11is placed above the first base substrate 110.

The first patterns M11 a and the second patterns M11 b are placed tocorrespond to the first specific pixel regions Rc1, the third patternsM11 c are placed to correspond to the first circuit parts 510, and thefourth patterns M11 d are placed to correspond to the second specificpixel regions Rc2. In addition, a portion of the first base substrate110 that does not overlap the first mask pattern portion M11 is coveredby the light shielding member BL.

Next, the first photosensitive material layer ORG1 is cured byirradiating light L such as ultraviolet light, toward the first basesubstrate 110 from above the first mask pattern portion M11. That is, afirst exposure process is performed.

In the first exposure process, portions of the third patterns M11 c thatare located relatively on the left side of the first mask patternportion M11 may not sag. On the other hand, portions of the firstpatterns M11 a and the second patterns M11 b that are placed tocorrespond to the first specific pixel regions Rc1 and portions of thefourth patterns M11 d that are placed to correspond to the secondspecific pixel regions Rc2 may sag due to gravity. Therefore, even ifthe third patterns M11 c and the fourth patterns M11 d havesubstantially the same size, portions of the first photosensitiveorganic layer ORG1 that are exposed by the third patterns M11 c andportions of the first photosensitive organic layer ORG1 that are exposedby the fourth patterns M11 d may have different widths.

Next, referring to FIGS. 16 and 17, the first mask pattern portion M11is moved to align some of the third pixel regions Rc that are unexposedto light with the first patterns M11 a and the second patterns M11 b andto align the fourth patterns M11 d with the second circuit parts 510′.At this time, the third patterns M11 c may be aligned with the firstspecific pixel regions Rc1 that are exposed to light by the firstpatterns M11 a and the second patterns M11 b in the first exposureprocess. In addition, at least one of the second patterns M11 b may bealigned with the second specific pixel regions Rc2 that are exposed tolight by the fourth patterns M11 d in the first exposure process. Otherportions exposed to light in the first exposure process may be coveredby the light shielding member BL.

Next, the first photosensitive material layer ORG1 is cured byirradiating light L such as ultraviolet light toward the first basesubstrate 110 from above the first mask pattern portion M11.

Portions of the first photosensitive material layer ORG1 that arelocated in the first specific pixel regions Rc1 have already beenexposed to light through the second patterns M11 b and may be exposedonce again through the third patterns M11 c. That is, each of theportions of the first photosensitive material layer ORG1 that is locatedin the first specific pixel regions Rc1 includes a single exposedportion and a double exposed portion. Since the double exposed portionis exposed to light relatively more than the single exposed portion, itmay be relatively harder than the single exposed portion.

Similarly, portions of the first photosensitive material layer ORG1 thatare located in the second specific pixel regions Rc2 have already beenexposed to light through the fourth patterns M11 d and may be exposedonce again through the second patterns M11 b. That is, each of theportions of the first photosensitive material layer ORG1 that is locatedin the second specific pixel regions Rc2 includes a single exposedportion and a double exposed portion, and the double exposed portion maybe relatively harder than the single exposed portion.

In the second exposure process, portions the third patterns M11 c thatare placed to correspond to the first specific pixel regions Rc1 may notsag. Similarly, portions of the second patterns M11 b that are placed tocorrespond to the second specific pixel regions Rc2 adjacent to thethird patterns M11 c may not sag. On the other hand, portions of thefourth patterns M11 d that are placed to correspond to the secondcircuit parts 510′ may sag due to gravity.

Next, uncured or unexposed portions of the first photosensitive materiallayer ORG1 may be removed to form the first insulating patterns Ptc1 ofthe third pixels Pxc as well as the first specific organic patterns 230a, the second specific organic patterns 230 b, the first peripheralorganic patterns 271, and the second peripheral organic patterns 273, asillustrated in FIG. 19.

The second patterns M11 b corresponding to the first specific pixelregions Rc1 may sag when the first specific organic patterns 230 a areformed in the first exposure process (see FIG. 15), but the secondpatterns M11 b corresponding to the second specific pixel regions Rc2may not sag when the second specific organic patterns 230 b are formedin the second exposure process (see FIG. 17). Therefore, the firstportion 231 a of each of the first specific organic patterns 230 a inthe first specific pixel regions Rc1 may be narrower than the thirdportion 231 b of each of the second specific organic patterns 230 b inthe second specific pixel regions Rc2.

The third patterns M11 c corresponding to the first specific pixelregions Rc1 may not sag when the first specific organic patterns 230 aare formed in the second exposure process (see FIG. 17), and the fourthpatterns M11 d corresponding to the second specific pixel regions Rc2may sag when the second specific organic patterns 230 b are formed inthe first exposure process (see FIG. 15). Therefore, the second portion233 a of each of the first specific organic patterns 230 a may be widerthan the fourth portion 233 b of each of the second specific organicpatterns 230 b.

In addition, the third patterns M11 c may not sag when the firstperipheral organic patterns 271 are formed in the first exposureprocess, and the fourth patterns M11 d may sag when the secondperipheral organic patterns 273 are formed in the second exposureprocess. Therefore, the first peripheral organic patterns 271 may bewider than the second peripheral organic patterns 273.

Next, a mask for forming the first pixels Pxa is prepared.

FIG. 20 is a plan view of a third mask pattern portion M21 of a mask forforming organic patterns of the first pixels Pxa illustrated in FIG. 1.

Referring to FIG. 20, the third mask pattern portion M21 for forming thefirst pixels Pxa may include first patterns M21 a corresponding to firstinsulating patterns Pta1 of the first pixels Pxa, second patterns M21 bcorresponding to second insulating patterns Pta2 of the first pixelsPxa, third patterns M21 c corresponding to the first peripheral patternsPt1, fourth patterns M21 d corresponding to the second peripheralpatterns Pt2, and a light shielding portion M21 e.

FIGS. 21 through 23 are views illustrating a process of manufacturingthe display device 1 using a mask having the third mask pattern portionM21 of FIG. 20.

Referring to FIGS. 21 through 23, a second photosensitive material layerORG 2 is formed on the entire surface of the first base substrate 110.The second photosensitive material layer ORG2 may include aphotosensitive material and may include a colorant having a second colorthat is different from the first color. The photosensitive material maybe a negative photosensitive material as in the case of the firstphotosensitive material layer ORG1.

Next, the third mask pattern portion M21 is placed above the first basesubstrate 110.

The first patterns M21 a and the second patterns M21 b of the third maskpattern portion M21 are placed to correspond to the first pixel regionsRa, the third patterns M21 c are placed to correspond to the firstcircuit parts 510 or the first peripheral organic patterns 271, and thefourth patterns M21 d are placed to correspond to the second specificpixel regions Rc2 or the second specific organic patterns 230 b. Inaddition, a portion of the first base substrate 110 that does notoverlap the third mask pattern portion M21 is covered by a lightshielding member BL.

Next, the second photosensitive material layer ORG2 is cured byirradiating light L such as ultraviolet light toward the first basesubstrate 110 from above the third mask pattern portion M21. That is, athird exposure process is performed.

Next, referring to FIG. 22, the third mask pattern portion M21 is movedto align some of the first pixel regions Ra that are unexposed to lightwith the first patterns M21 a and the second patterns M21 b of the thirdmask pattern portion M21 during the third exposure process. In thealigning process, the third patterns M21 c are aligned with the firstspecific pixel regions Rc1 or the first specific organic patterns 230 a,and the fourth patterns M21 d are aligned with the second circuit parts510′ or the second peripheral organic patterns 273.

Next, the second photosensitive material layer ORG2 is cured byirradiating light L such as ultraviolet light toward the first basesubstrate 110 from above the third mask pattern portion M21. That is, afourth exposure process is performed.

Next, uncured or unexposed portions of the second photosensitivematerial layer ORG2 are removed to form the first insulating patternsPta1 of the first pixels Pxa as well as third specific organic patterns311, fourth specific organic patterns 313, third peripheral organicpatterns 315, and fourth peripheral organic patterns 317 illustrated inFIG. 23.

Next, a mask for forming the second pixels Pxb is prepared.

FIG. 24 is a plan view of a fourth mask pattern portion M31 of a maskfor forming organic patterns of the second pixels Pxb illustrated inFIG. 1.

Referring to FIG. 24, the fourth mask pattern portion M31 for formingthe second pixels Pxb may include first patterns M31 a corresponding tofirst insulating patterns Ptb1 of the second pixels Pxb, second patternsM31 b corresponding to second insulating patterns Ptb2 of the secondpixels Pxb, and a light shielding portion M31 e.

FIGS. 25 through 27 are views illustrating a process of manufacturingthe display device 1 using a mask having the fourth mask pattern portionM31 of FIG. 24.

Referring to FIGS. 25 through 27, a third photosensitive material layerORG3 is formed on the entire surface of the first base substrate 110.The third photosensitive material layer ORG3 may include aphotosensitive material and may include a colorant having a third colorthat is different from the first color and the second color. Thephotosensitive material may be a negative photosensitive material as inthe case of the first photosensitive material layer ORG1.

Next, the fourth mask pattern portion M31 is placed above the first basesubstrate 110.

The first patterns M31 a and the second patterns M31 b of the fourthmask pattern portion M31 are placed to correspond to the second pixelregions Rb. In addition, a portion of the first base substrate 110 thatdoes not overlap the fourth mask pattern portion M31 is covered by alight shielding member BL.

Next, a fifth exposure process is performed by irradiating ultravioletlight from above the fourth mask pattern portion M31.

Next, referring to FIG. 26, the fourth mask pattern portion M31 is movedto align some of the second pixel regions Rb that are unexposed to lightwith the first patterns M31 a and the second patterns M31 b of thefourth mask pattern portion M31 during the fifth exposure process. Then,a sixth exposure process is performed.

Next, uncured or unexposed portions of the third photosensitive materiallayer ORG3 are removed to form the first insulating patterns Ptb1 of thesecond pixels Pxb and second organic patterns 270 illustrated in FIG.27.

Next, a transparent conductive layer may be deposited and patterned toform the pixel electrode 150 of each pixel. In addition, the lightshielding layer 220 may be formed to produce an array substrate 100.

Next, the counter substrate 800 may be placed to face the arraysubstrate 100, and the liquid crystal layer LC may be placed between thearray substrate 100 and the counter substrate 800 to produce the displaydevice 1.

In the display device of the current embodiment, double exposure isperformed at the boundary of a portion where a mask split exposureprocess is performed. Therefore, a uniform cell gap at the splitexposure boundary can be obtained preventing deterioration of displayquality of the display device. In addition, since patterns are alsoformed in the peripheral area PA, it is possible to prevent a shortcircuit between the common electrode 870 and the elements of the arraysubstrate 100 and/or prevent an occurrence of other defects and furtherprevent deterioration of display quality because a uniform cell gap canbe maintained in the peripheral area PA improving the reliability of thedisplay device.

Embodiments of the present disclosure provide at least the followingadvantage.

That is, a display device with improved display quality and reliabilitycan be provided.

However, the effects of the embodiments of the inventive concept are notrestricted to the one set forth herein. The above and other effects ofthe embodiments will become more apparent to one of daily skill in theart to which the embodiments pertain by referencing the claims.

Although the exemplary embodiments of the present disclosure have beendisclosed for illustrative purposes, the embodiments are onlyexemplified, but do not limit the present disclosure. Those skilled inthe art will appreciate that various modifications and applications arepossible, without departing from the scope and spirit of the presentdisclosure as disclosed in the accompanying claims. For example, eachelement specified in embodiments of the present disclosure can bevariously modified and implemented. Further, differences related to suchmodifications and applications should be interpreted as being includedin the scope of the present disclosure defined by the accompanyingclaims.

What is claimed is:
 1. A display device comprising: a base substratethat comprises a display area and a peripheral area; a first circuitpart that is located in the peripheral area of the base substrate; afirst pixel that is located in the display area of the base substrate;and a second pixel that is located in the display area of the basesubstrate, wherein the first pixel is located between the first circuitpart and the second pixel along a direction and comprises a firstorganic pattern that comprises a first portion located on the basesubstrate and a second portion protruding upward from the first portion,and the second pixel comprises a second organic pattern that comprises athird portion located on the base substrate and a fourth portionprotruding upward from the third portion, wherein the first portion, thesecond portion, the third portion, and the fourth portion are made ofthe same material, and a width of the second portion measured along thedirection is different from a width of the fourth portion measured alongthe direction.
 2. The display device of claim 1, wherein the firstportion comprises a first overlap portion that overlaps the secondportion and a first non-overlap portion that does not overlap the secondportion, and the first overlap portion of the first portion has ahardness that is greater hardness than a hardness of the firstnon-overlap portion of the first portion.
 3. The display device of claim2, wherein the fourth portion comprises a second overlap portion thatoverlaps the fourth portion and a second non-overlap portion that doesnot overlap the fourth portion, and the second overlap portion of thethird portion has a hardness that is greater than a hardness of thesecond non-overlap portion of the third portion.
 4. The display deviceof claim 3, wherein the hardness of the first overlap portion is greaterthan the hardness of the second non-overlap portion, and the hardness ofthe second overlap portion is greater than the hardness of the firstnon-overlap portion.
 5. The display device of claim 1, wherein the widthof the second portion measured along the direction is greater than thewidth of the fourth portion measured along the direction, and a width ofthe first portion measured along the direction is smaller than a widthof the third portion measured along the direction.
 6. The display deviceof claim 1, wherein the first pixel further comprises a first thin filmtransistor that is located between the base substrate and the firstorganic pattern and overlaps the second portion, and the second pixelfurther comprises a second thin film transistor that is located betweenthe base substrate and the second organic pattern and overlaps thefourth portion.
 7. The display device of claim 1, further comprising: athird organic pattern that is located on the second portion; and afourth organic pattern that is located on the fourth portion and is madeof the same material as the third organic pattern, wherein the firstorganic pattern and the second organic pattern comprise a firstcolorant, and the third organic pattern and the fourth organic patterncomprise a second colorant that is different from the first colorant. 8.The display device of claim 7, further comprising a light shieldinglayer that is located on the base substrate and covers the first organicpattern, the second organic pattern, the third organic pattern, and thefourth organic pattern.
 9. The display device of claim 8, furthercomprising: a counter substrate that is located on the light shieldinglayer; and a liquid crystal layer that is located between the lightshielding layer and the counter substrate, wherein a portion of thelight shielding layer that overlaps the second portion and a portion ofthe light shielding layer that overlaps the fourth portion are incontact with the counter substrate.
 10. The display device of claim 1,further comprising a first peripheral organic pattern that is located onthe first circuit part and is made of the same material as the firstorganic pattern and the second organic pattern.
 11. The display deviceof claim 10, wherein the hardness of the first overlap portion of thefirst portion that overlaps the second portion is greater than ahardness of the first peripheral organic pattern.
 12. The display deviceof claim 10, wherein the hardness of the second portion is greater thana hardness of the first peripheral organic pattern.
 13. The displaydevice of claim 10, further comprising: a second circuit part that islocated in the peripheral area of the base substrate and is located onan opposite side of the display area from the first circuit part; and asecond peripheral organic pattern that is located on the second circuitpart and is made of the same material as the first peripheral organicpattern.
 14. The display device of claim 13, wherein a width of thefirst peripheral organic pattern measured along the direction is greaterthan a width of the second peripheral organic pattern measured along thedirection.
 15. The display device of claim 13, further comprising: athird peripheral organic pattern that is located on the first peripheralorganic pattern; and a fourth peripheral organic pattern that is locatedon the second peripheral organic pattern and is made of the samematerial as the third peripheral organic pattern, wherein the firstperipheral organic pattern and the second peripheral organic patterncomprise a first colorant, and the third peripheral organic pattern andthe fourth peripheral organic pattern comprise a second colorant that isdifferent from the first colorant.
 16. The display device of claim 10,wherein the first circuit part comprises a contact region thatelectrically connect wirings formed in the first circuit part, and thefirst peripheral organic pattern does not overlap the contact region.17. A display device comprising: a base substrate that comprises adisplay area and a peripheral area; a circuit part that is located inthe peripheral area of the base substrate; a first pixel that is locatedin the display area of the base substrate; and a second pixel that islocated in the display area of the base substrate, wherein the firstpixel is located between the circuit part and the second pixel along adirection and comprises a first organic pattern that comprises a firstportion located on the base substrate and having a first hardness and asecond portion having a second hardness that is greater than the firsthardness, and the second pixel comprises a second organic pattern thatcomprises a third portion located on the base substrate and having athird hardness and a fourth portion having a fourth hardness that isgreater than the third hardness, wherein a width of the first organicpattern measured along the direction is different from a width of thesecond organic pattern measured along the direction.
 18. The displaydevice of claim 17, wherein a width of the second portion having thesecond hardness measured along the direction is different from a widthof the fourth portion having the fourth hardness measured along thedirection.
 19. The display device of claim 18, wherein the secondhardness is greater than the third hardness, and the fourth hardness isgreater than the first hardness.
 20. The display device of claim 17,wherein the display area comprises a double exposure area, and the firstpixel and the second pixel are located in the double exposure area.